International Business Machines Corporation
Controllable formation of recessed bottom electrode contact in a memory metallization stack

Abstract:

A semiconductor device structure includes an MRAM metallization stack. A via is disposed within a dielectric cap layer that is on and in contact with the metallization stack. A liner is disposed on sidewalls and a bottom surface of the via. A recessed electrode contact is disposed within a portion of the via and in contact with a first part of the liner in contact with sidewalls of the via. A second part of the liner is in contact with the sidewalls is above a top surface of the contact. A method for forming the semiconductor device structure includes forming a via within a MRAM metallization stack. The via exposes a top surface of the second metal layer. An electrode contact is formed within a portion of the via. A cap layer is formed within a remaining portion of the via in contact with a top surface of the electrode contact.