International Business Machines Corporation
Uniform work function metal recess for vertical transistor complementary metal oxide semiconductor technology

Abstract:

A semiconductor device includes a first transistor including a first vertical fin arranged between first bottom source or drain (S/D) region and first top S/D region, and a first recessed gate stack arranged on a sidewall of the first vertical fin. A second transistor includes second vertical fin arranged between a second bottom S/D region and second top S/D region, and a second recessed gate stack arranged on a sidewall of the second vertical fin. A first spacer contacts the sidewall of the first vertical fin and on the first recessed gate stack or the second recessed gate stack. A second spacer contacts the first spacer of the first transistor or the second transistor. The second spacer is on a sidewall of the top S/D region of the first transistor or second transistor. The inner spacer and the outer spacer include different materials.