International Business Machines Corporation
Nanosheet P-type transistor with oxygen reservoir

Abstract:

An approach provides a semiconductor structure for a p-type field effect transistor that includes a nanosheet stack with a top protective layer composed of a plurality of oxygen reservoir layers between a plurality of channel layers, wherein the nanosheet stack is a semiconductor substrate adjacent to one or more isolation structures. The approach includes an interfacial material is around each layer of the plurality of channel layers and on the semiconductor substrate and a layer of gate dielectric material that is over the interfacial material, the top protective layer, and on the one or more isolation structures. The approach includes a layer of a work function metal is over the gate dielectric material and a liner that is over the nanosheet stack and over the work function metal on each of the one or more isolation structures that is covered by a low resistivity metal layer.