International Business Machines Corporation
Extreme ultraviolet (EUV) mask stack processing

Abstract:

A method of removing layers of an extreme ultraviolet (EUV) pattern stack is provided. The method includes forming one or more resist templates on an upper hardmask layer. The method further includes exposing portions of the surface of the upper hardmask layer to a dry etch process to produce modified and activated surfaces. The method further includes etching the modified and activated surfaces to expose an underlying organic planarization layer.