International Business Machines Corporation
VERTICAL TRANSPORT FIELD-EFFECT TRANSISTOR INCLUDING REPLACEMENT GATE

Abstract:

A vertical transport field-effect transistor array includes continuous spacers at cell edges that are formed following a replacement metal gate process. Techniques for fabricating the transistor array include forming trenches extending along the fin edges of the array to provide access to sacrificial gates, replacing the sacrificial gates with gate stacks, and forming the continuous spacers to encapsulate the gate stacks once formed. Removal of interlevel dielectric material from the array is not required for gate replacement. Bottom source/drain contacts may be formed in the trenches and in adjoining relation to the continuous spacers.