International Business Machines Corporation
LOW VOLTAGE/POWER JUNCTION FET WITH ALL-AROUND JUNCTION GATE

Abstract:

A Junction Field Effect Transistor (JFET) has a source and a drain disposed on a substrate. The source and drain have an S/D doping with an S/D doping type. Two or more channels are electrically connected in parallel between the source and drain and can carry a current between the source and drain. Each of the channels has two or more channel surfaces. The channel has the same channel doping type as the S/D doping type. A first gate is in direct contact with one of the channel surfaces. One or more second gates is in direct contact with a respective second channel surface. The gates are doped with a gate doping that has a gate doping type opposite of the channel doping type. A p-n junction (junction gate) is formed where the gates and channel surfaces are in direct contact. The first and second gates are electrically connected so a voltage applied to the first and second gates creates at least two depletion regions in each of the channels. In some embodiments, the junction gates are formed all-around the channel surfaces. As a result, the current flowing in the channels between the source and drain can be controlled with less voltage applied to the gates and less power consumption.