International Business Machines Corporation
MULTI-METAL INTERCONNECTS FOR SEMICONDUCTOR DEVICE STRUCTURES

Abstract:

A semiconductor device structure includes a memory element disposed within an interlayer dielectric (ILD) layer. A contact is disposed within the ILD in contact with the memory element and includes a first metal. A logic element is disposed within the ILD and comprises a second metal that is different than the first metal. A method of forming the semiconductor structure includes forming at least one memory element within an interlayer dielectric (ILD) layer. A contact that includes a first metal is formed in contact with the memory element. At least one logic element is formed in the ILD layer, where the logic element includes a second metal that is different than the first metal.