International Business Machines Corporation
SUBTRACTIVE BACK-END-OF-LINE VIAS
Last updated:
Abstract:
Integrated chips and methods of forming the same include forming a conductive layer over a lower conductive line. The conductive layer is etched to form a via on the lower conductive line. A first insulating layer is formed around the via. The first insulating layer is etched back to a height below a height of the via. An upper conductive line is formed on the via, making contact with at least a top surface and a side surface of the via.
Status:
Application
Type:
Utility
Filling date:
7 Apr 2020
Issue date:
7 Oct 2021