International Business Machines Corporation
ASYMMETRIC CHANNEL FINFETS WITH WRAP AROUND CHANNEL

Abstract:

A semiconductor device that includes a fin structure, and a channel epitaxial wrap around layer at each end of a channel portion of the fin structure. The semiconductor device also includes a gate structure including a gate dielectric having gate edge portions in direct contact with the channel epitaxial wrap around layer. A middle portion of the gate dielectric is in direct contact with a central channel portion of the fin structure between the two ends of the channel portion of the fin structure. Source and drain regions are present on opposing sides of the channel portion of the fin structure.