International Business Machines Corporation
DUMMY FIN TEMPLATE TO FORM A SELF-ALIGNED METAL CONTACT FOR OUTPUT OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR

Abstract:

A technique relates to a semiconductor device. A source/drain layer is formed. Fins with gate stacks are formed in a fill material, a dummy fin template including at least one fin of the fins and at least one gate stack of the gate stacks, the fins being formed on the source/drain layer. A trench is formed through the fill material by removing the dummy fin template, such that a portion of the source/drain layer is exposed in the trench. A source/drain metal contact is formed on the portion of the source/drain layer in the trench.