International Business Machines Corporation
ORGANIC PHOTORESIST ADHESION TO METAL OXIDE HARDMASKS
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Abstract:
An exemplary semiconductor fabrication stack includes underlying layers; an organic planarization layer atop the underlying layers; a metal oxide hardmask atop the organic planarization layer and doped with both carbon and nitrogen; and an organic photoresist directly atop the doped metal oxide hardmask. In one or more embodiments, the doped metal oxide hardmask exhibits a water contact angle of greater than 80.degree..
Status:
Application
Type:
Utility
Filling date:
16 Apr 2020
Issue date:
21 Oct 2021