International Business Machines Corporation
ORGANIC PHOTORESIST ADHESION TO METAL OXIDE HARDMASKS

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Abstract:

An exemplary semiconductor fabrication stack includes underlying layers; an organic planarization layer atop the underlying layers; a metal oxide hardmask atop the organic planarization layer and doped with both carbon and nitrogen; and an organic photoresist directly atop the doped metal oxide hardmask. In one or more embodiments, the doped metal oxide hardmask exhibits a water contact angle of greater than 80.degree..

Status:
Application
Type:

Utility

Filling date:

16 Apr 2020

Issue date:

21 Oct 2021