International Business Machines Corporation
WAFER BACKSIDE ENGINEERING FOR WAFER STRESS CONTROL
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Abstract:
A semiconductor structure and a method for managing semiconductor wafer stress are disclosed. The semiconductor structure includes a semiconductor wafer, a first stress layer disposed on and in contact with a backside of the semiconductor wafer, and a second stress layer on and in contact with the first stress layer. The first stress layer exerts a first stress on the semiconductor wafer and the second layer exerts a second stress on the semiconductor wafer that is opposite the first backside stress. The method includes forming a first stress layer on and in contact with a backside of a semiconductor wafer, and further forming a second stress layer on and in contact with the first stress layer. The first stress layer exerts a first stress on the semiconductor wafer and the second stress layer exerts a second stress on the semiconductor wafer that is opposite to the first stress.
Utility
14 Apr 2020
14 Oct 2021