International Business Machines Corporation
Voltage starved passgate with IR drop

Last updated:

Abstract:

Aspects of the invention relate to an apparatus having a transmission gate coupled to a delay element and including a first transistor and a second transistor. A first node is coupled to a first gate of the first transistor, a first current source, and a first resistive element, an opposite end of the first resistive element being coupled to a ground potential. A second node is coupled to a second gate of the second transistor, a second current source, and a second resistive element, an opposite end of the second resistive element being coupled to a power supply.

Status:
Grant
Type:

Utility

Filling date:

23 Sep 2019

Issue date:

19 Oct 2021