International Business Machines Corporation
Vertical field-effect transistor with a bottom contact that exhibits low electrical resistance

Abstract:

Techniques regarding one or more VFETs operably coupled to bottom contacts with low electrical resistance are provided. For example, one or more embodiments described herein can comprise an apparatus, which can comprise a vertical field-effect transistor device that can comprise a semiconductor fin positioned on a source/drain region, which can comprise a semiconductor substrate. The apparatus can also comprise a metal contact layer positioned on the source/drain region and at least partially surrounding a base of the semiconductor fin. Further, the metal contact layer can be in electrical communication with the source/drain region.