International Business Machines Corporation
Nanosheet SRAM by SIT process

Abstract:

A method is presented for constructing high-density static random access memory (SRAM). The method includes forming a nanosheet SRAM by a sidewall image transfer (SIT) process and independently tuning widths of n-type field effect transistor (nFET) nanosheet structures and p-type field effect transistor (pFET) nanosheet structures of the nanosheet SRAM. The nFET nanosheet structures have a first width and the pFET nanosheet structures have a second width, the first width being greater than the second width. A distance between an nFET nanosheet structure and an adjacent pFET nanosheet structure is greater than a distance between two adjacent pFET nanosheet structures.