International Business Machines Corporation
Metal via structure

Abstract:

A method for fabricating a semiconductor device includes forming first and second interconnect levels on a substrate with the first and second interconnect levels having respective first and second dielectric layers and first and second patterned metal conductors and where each of the first and second patterned metal conductors includes a first metallic material, depositing a third dielectric layer onto the second first interconnect layer, forming a via opening extending through the third dielectric layer and the second dielectric layer and connecting with the first patterned metal conductor of the first interconnect level and depositing a second metallic material different from the first metallic material into the via opening to form a via The via electrically couples with the patterned metal layer of the first interconnect level.