International Business Machines Corporation
Transistor having in-situ doped nanosheets with gradient doped channel regions

Abstract:

Embodiments of the invention are directed to a method of performing fabrication operations to form a transistor. The fabrication operations include forming a nanosheet having a first nanosheet sidewall and a second nanosheet sidewall. The nanosheet is communicatively coupled to a source region at the first nanosheet sidewall. The nanosheet is communicatively coupled to a drain region at the second nanosheet sidewall. The nanosheet further includes a source-side nanosheet region that includes the first nanosheet sidewall. The nanosheet further includes a drain-side nanosheet region that includes the second nanosheet sidewall. Dopants are provided in the source-side nanosheet region using an in-situ doping process, wherein a doping concentration in the source-side nanosheet region is greater than a doping concentration of the drain-side nanosheet region.