International Business Machines Corporation
Wrap around contact formation for VTFET

Abstract:

Improved top source and drain contact designs for VTFET devices are provided. In one aspect, a method of forming a VTFET device includes: depositing a first ILD over a VTFET structure having fins patterned in a substrate, bottom source and drains at a base of the fins, bottom spacers on the bottom source and drains and gates alongside the fins; patterning trenches in the first ILD; forming top spacers lining the trenches; forming top source and drains in the trenches at the tops of the fins; forming sacrificial caps covering the top source and drains; depositing a second ILD onto the first ILD; patterning contact trenches in the second ILD, exposing the sacrificial caps; removing the sacrificial caps through the contact trenches; and forming top source and drain contacts in the contact trenches that wrap around the top source and drains. A VTFET device is also provided.