International Business Machines Corporation
Complementary field-effect transistors

Abstract:

A semiconductor structure includes a first field-effect transistor disposed on a substrate. The first field-effect transistor includes a stack of nanosheet layers, a first gate, and a first source/drain region. The semiconductor structure further includes a second field-effect transistor vertically stacked above the first field-effect transistor. The second field-effect transistor includes a plurality of nanowires, a second gate, and a second source/drain region. The first gate and the second gate are vertically aligned. The first source/drain region and the second source/drain region are vertically aligned.