International Business Machines Corporation
Self aligned block masks for implantation control
Last updated:
Abstract:
Methods for doping a semiconductor layer include forming a first mask on a first region of a semiconductor layer. A second region of the semiconductor layer, that is not covered by the first mask, is doped. A second mask is formed on the second region of the semiconductor layer. The first mask is etched away. The first region of the semiconductor layer is doped.
Status:
Grant
Type:
Utility
Filling date:
3 Jul 2019
Issue date:
16 Nov 2021