International Business Machines Corporation
Self aligned block masks for implantation control

Last updated:

Abstract:

Methods for doping a semiconductor layer include forming a first mask on a first region of a semiconductor layer. A second region of the semiconductor layer, that is not covered by the first mask, is doped. A second mask is formed on the second region of the semiconductor layer. The first mask is etched away. The first region of the semiconductor layer is doped.

Status:
Grant
Type:

Utility

Filling date:

3 Jul 2019

Issue date:

16 Nov 2021