International Business Machines Corporation
Self-limiting liners for increasing contact trench volume in n-type and p-type transistors

Abstract:

Embodiments of the invention include semiconductor devices having a first n-type S/D region, a second n-type S/D region, and a first layer of protective material over the second n-type S/D region, wherein the first layer of protective material includes a first type of material and a second type of material. A second layer of protective material is formed over the first layer of protective material, wherein the second layer of protective material includes an oxide of the second type of material. The devices further include a first p-type S/D region, a second p-type S/D region, and the second layer of protective material over the second p-type S/D region, wherein the second p-type S/D region second layer of protective material includes the first type of material and the second type of material, and wherein the second layer of protective material includes the oxide of the second type of material.