International Business Machines Corporation
Thin film formation method

Abstract:

A thin film formation method includes setting a film formation subject to 200.degree. C. or higher. A first step includes changing a first state, in which a film formation material and a carrier gas are supplied so that the film formation material collects on the film formation subject, to a second state, in which the film formation material is omitted. A second step includes changing a third state, in which a hydrogen gas and a carrier gas are supplied to reduce the film formation material, to a fourth state, in which the hydrogen gas is omitted. The film formation material is any one of Al(C.sub.xH.sub.2x+1).sub.3, Al(C.sub.xH.sub.2x+1).sub.2H, and Al(C.sub.xH.sub.2x+1).sub.2Cl. The first step and the second step are alternately repeated to form an aluminum carbide film on the film formation subject such that a content rate of aluminum atoms is 20 atomic percent or greater.