International Business Machines Corporation
Tight pitch via structures enabled by orthogonal and non-orthogonal merged vias
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Abstract:
In accordance with an embodiment of the present invention, a photolithographic mask is provided. The photolithographic mask includes at least one merged via pattern in the photolithographic mask for printing a merged via opening in a resist layer, wherein the at least one merged via pattern includes a compound shape having a first rectangular opening portion and a second rectangular opening portion that intersect at an angle.
Status:
Grant
Type:
Utility
Filling date:
12 Apr 2018
Issue date:
30 Nov 2021