International Business Machines Corporation
Phase change material with reduced reset state resistance drift

Abstract:

A PCM cell is provided that includes a silver (Ag) doped Ge.sub.2Sb.sub.2Te.sub.5 (GST) alloy layer as the PCM material. The PCM cell containing the Ag doped GST alloy layer exhibits a reduced reset state resistance drift as compared to an equivalent PCM cell in which a non-Ag doped GST alloy layer is used. In some embodiments and depending on the Ag dopant concentration of the Ag doped GST alloy layer, a constant reset state resistance or even a negative reset state resistance drift can be obtained.