International Business Machines Corporation
3D ReRAM formed by metal-assisted chemical etching with replacement wordline and wordline separation

Abstract:

Metal-assisted chemical etching is employed to form a three-dimensional (3D) resistive random access memory (ReRAM) in which the etching aspect ratio limit is extended and the top trench and bottom trench CD uniformity is improved. The 3D ReRAM includes a metal catalyst located between a bitline electrode and a selector device. Further, the 3D ReRAM includes vertically stacked and spaced apart replacement wordline electrodes that are located adjacent to the bitline electrode.