International Business Machines Corporation
Multi-metal dipole doping to offer multi-threshold voltage pairs without channel doping for highly scaling CMOS device

Abstract:

A semiconductor device including pairs of multiple threshold voltage (Vt) devices includes at least a first region corresponding to a first pair of Vt devices, a second region corresponding to a second pair of Vt devices including a first dipole layer, and a third region corresponding to a third pair of Vt devices including a second dipole layer different from the first dipole layer.