International Business Machines Corporation
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE
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Abstract:
A semiconductor device includes a fin structure including a recess formed in an upper surface of the fin structure, an inner gate formed in the recess of the fin structure, and an outer gate formed outside and around the fin structure.
Status:
Application
Type:
Utility
Filling date:
14 Aug 2021
Issue date:
2 Dec 2021