International Business Machines Corporation
VERTICAL TRANSISTOR WITH SELF-ALIGNED GATE

Abstract:

A method of forming a vertical transistor is provided. The method includes forming a first set of vertical fins in a first row on a first bottom source/drain layer, and a second set of vertical fins in a second row on a second bottom source/drain layer, wherein the vertical fins in the same row are separated by a spacing with a sidewall-to-sidewall distance, S.sub.D, and the vertical fins in the same column of adjacent rows are separated by a gap having a gap distance, G.sub.D. The method further includes forming a gate metal layer on the first set of vertical fins and the second set of vertical fins, wherein the gate metal layer does not fill in the gap between vertical fins in the same column, and forming a cover layer plug in the remaining gap after forming the gate metal layer.