International Business Machines Corporation
Bottom electrode for semiconductor memory device

Abstract:

A structure and a method for fabricating a bottom electrode for an integrated circuit device are described. A first dielectric layer is provided over a substrate and the first dielectric layer has a recess. A bottom electrode is formed over the recess. The bottom electrode consists of a microstud layer disposed completely within the recess of the dielectric and conforming to the recess, a bottom pedestal disposed on a top surface of the microstud and a top pedestal on a top surface of the bottom pedestal. The material used for the bottom pedestal has a lower electrochemical voltage than a material used for the microstud. A conductive element of the integrated circuit device is formed on a top surface of the bottom electrode. A first portion of the bottom electrode is disposed in and conforms to the recess. A second portion of the bottom electrode and the conductive element are conical sections.