International Business Machines Corporation
ERASING LARGE BLOCKS OF CHARGE-BASED MEMORY WITH HARDWARE SUPPORT

Abstract:

The disclosure relates to an initialization circuit for initializing memory cells of a memory array. The individual memory cells are coupled to a common bit line of the memory array via at least one pass element of the individual memory cells. Each individual memory cell comprises a charge-based storage element including a capacitance. The initialization circuit activates the pass elements of a plurality of the memory cells to be initialized such that the capacitances of the plurality of memory cells are connected simultaneously to the common bit line. Further, aspects of the disclosure relate to a method for initializing memory cells and a semiconductor circuit.