International Business Machines Corporation
Non-volatile resistive processing unit

Abstract:

Semiconductor devices and methods of forming the same include forming a drain/gate contact, in an opening of a layer of dielectric material, that includes a portion that extends up along sidewalls of the opening. A drain layer is formed on a bottom surface of the drain/gate contact. A trapped insulator layer is formed on sidewalls of the drain/gate contact. A channel layer is formed in the opening. A source layer is formed on the channel layer.