International Business Machines Corporation
Fabricating a gate-all-around (GAA) field effect transistor having threshold voltage asymmetry by thinning source side lateral end portion of the nanosheet layer

Abstract:

Channel engineering is employed to obtain a gate-all-around field-effect transistor having an asymmetric threshold voltage. A dual channel profile enables a steep potential distribution near the source side that enhances the lateral channel electric field and thus increases the carrier mobility.