International Business Machines Corporation
Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS back-end

Abstract:

Artificial synaptic devices with an HfO.sub.2-based ferroelectric layer that can be implemented in the CMOS back-end are provided. In one aspect, an artificial synapse element is provided. The artificial synapse element includes: a bottom electrode; a ferroelectric layer disposed on the bottom electrode, wherein the ferroelectric layer includes an HfO.sub.2-based material that crystallizes in a ferroelectric phase at a temperature of less than or equal to about 400.degree. C.; and a top electrode disposed on the bottom electrode. An artificial synaptic device including the present artificial synapse element and methods for formation thereof are also provided.