International Business Machines Corporation
Stacked access device and resistive memory
Last updated:
Abstract:
A semiconductor device including stacked access device and resistive memory includes a stack disposed on a base structure, the stack including an access device stack and a resistive random-access memory (ReRAM) device stack, sidewall spacers disposed along a portion of the stack, a dielectric layer disposed over the stack, the sidewall spacers and the base structure, and an interlevel dielectric disposed on the dielectric layer.
Status:
Grant
Type:
Utility
Filling date:
4 Mar 2019
Issue date:
29 Mar 2022