International Business Machines Corporation
Quad-layer high-k for metal-insulator-metal capacitors

Abstract:

A semiconductor structure, and a method of making the same includes a multiple electrode stacked capacitor containing a sequence of first metal layers interleaved with second metal layers. A quad-layer stack separates each of the first metal layers from each of the second metal layers, the quad-layer dielectric stack includes a first dielectric layer made of Al.sub.2O.sub.3, a second dielectric layer made of HfO.sub.2, a third dielectric layer made of Al.sub.2O.sub.3, and a fourth dielectric layer made of HfO.sub.2.