International Business Machines Corporation
ADDITIVE DAMASCENE PROCESS

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Abstract:

An embodiment of the invention may include a method of forming a device and the resulting structure. The method may include forming a first conductive pattern on a first surface of a substrate. The method may include depositing a first conformal layer on the first surface of the substrate and the first conductive pattern. The method may include planarizing the first conformal layer so that a top surface of the first conductive pattern is substantially planar to a top surface of the first conformal layer. The method may include forming a first electrical component on the top surface of the first conformal layer in contact with the first conductive pattern. This may enable wiring on different levels as the electrical components, while allowing the first electrical component to be built on a substantially planar surface.

Status:
Application
Type:

Utility

Filling date:

28 Sep 2020

Issue date:

31 Mar 2022