International Business Machines Corporation
RESONANT SYNTHETIC ANTIFERROMAGNET REFERENCE LAYERED STRUCTURE

Abstract:

A magnetic memory device including a magnetic tunnel junction (MTJ) pillar containing a stable resonant synthetic antiferromagnet (SAF) reference layered structure in which the ferromagnetic resonance characteristics of a polarizing magnetic layer of the SAF reference layered structure are substantially matched to at least a first magnetic reference layer within the SAF reference layered structure. By substantially matching the ferromagnetic resonance characteristics of the polarizing magnetic layer to at least the first magnetic reference layer, a MTJ pillar is provided in which the dynamic stability of the polarizing magnetic layer can be improved, and undesirable magnetic reference layer instability related write-errors can be mitigated.