International Business Machines Corporation
TRANSISTOR HAVING WRAP-AROUND SOURCE/DRAIN CONTACTS AND UNDER-CONTACT SPACERS

Abstract:

Embodiments of the invention are directed to a semiconductor device structure that includes a first channel region over a substrate, a second channel region over the first channel region, and a merged source or drain (S/D) region over the substrate and adjacent to the first channel region and the second channel region. The merged S/D region is communicatively coupled to the first channel region and the second channel region. A wrap-around S/D contact is configured such that it is on a top surface, sidewalls, and a bottom surface of the merged S/D region.