International Business Machines Corporation
TOPOLOGICAL SEMI-METAL INTERCONNECTS

Last updated:

Abstract:

Provided is a method for fabricating an interconnect. The method comprises forming a topological semi-metal layer. The method further comprises patterning the topological semi-metal layer to form one or more interconnects. The method further comprises forming a dielectric layer between the one or more interconnects. The method further comprises forming a hermetic dielectric cap layer on top of the one or more interconnects and the dielectric layer.

Status:
Application
Type:

Utility

Filling date:

17 Nov 2020

Issue date:

19 May 2022