International Business Machines Corporation
TOPOLOGICAL SEMI-METAL INTERCONNECTS
Last updated:
Abstract:
Provided is a method for fabricating an interconnect. The method comprises forming a topological semi-metal layer. The method further comprises patterning the topological semi-metal layer to form one or more interconnects. The method further comprises forming a dielectric layer between the one or more interconnects. The method further comprises forming a hermetic dielectric cap layer on top of the one or more interconnects and the dielectric layer.
Status:
Application
Type:
Utility
Filling date:
17 Nov 2020
Issue date:
19 May 2022