International Business Machines Corporation
Nanosheet semiconductor devices with sigma shaped inner spacer

Abstract:

A method of manufacturing a nanosheet field effect transistor (FET) device is provided. The method includes forming a plurality of nanosheet stacks on a substrate, the nanosheet stacks including alternating layers of sacrificial layers and active semiconductor layers. The method includes removing portions of the sacrificial layers to form angular indents in each side thereof, then filling the indents with a low-.kappa. material layer. The method further includes forming source drain regions between the nanosheet stacks, removing remaining portions of the sacrificial layers, and then forming gate metal layers in spaces formed by the removal of the sacrificial layers.