International Business Machines Corporation
Nanosheet transistor having abrupt junctions between the channel nanosheets and the source/drain extension regions

Abstract:

Embodiments of the invention are directed to a nanosheet field effect transistor (FET) having a nanosheet stack formed over a substrate. The nanosheet stack includes a plurality of channel nanosheets, wherein the plurality of channel nanosheets includes a first channel nanosheet having a first end region, a second end region, and a central region positioned between the first end region and the second end region. The first end region and the second end region include a first type of semiconductor material, wherein, when the first type of semiconductor material is at a first temperature, the first type of semiconductor material has a first diffusion coefficient for a dopant. The central region includes a second type of semiconductor material, wherein, when the second type of semiconductor material is at the first temperature, the second type of semiconductor material has a second diffusion coefficient for the dopant.