International Business Machines Corporation
Strained and unstrained semiconductor device features formed on the same substrate

Abstract:

Embodiments of the invention are directed to a configuration of semiconductor devices having a substrate and a first feature formed on the substrate, wherein the first feature includes a first preserve region having compressive strain that extends throughout the first preserve region, and wherein the first feature further includes a cut region that includes a converted dielectric. The converted dielectric is a dielectric material that has been converted to the dielectric from another material.