International Business Machines Corporation
STACKED ACCESS DEVICE AND RESISTIVE MEMORY
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Abstract:
A semiconductor device including stacked access device and resistive memory includes a stack disposed on a base structure, the stack including an access device stack and a resistive random-access memory (ReRAM) device stack, sidewall spacers disposed along a portion of the stack, a dielectric layer disposed over the stack, the sidewall spacers and the base structure, and an interlevel dielectric disposed on the dielectric layer.
Status:
Application
Type:
Utility
Filling date:
24 Feb 2022
Issue date:
9 Jun 2022