International Business Machines Corporation
HIGH DENSITY RERAM INTEGRATION WITH INTERCONNECT

Abstract:

A cross-bar ReRAM comprising a substrate, a plurality of first columns extending parallel to each other on the top surface of the substrate, wherein each of the plurality of the first columns includes a resistive random-access memory (ReRAM) stack comprised of a plurality of layers. A plurality of second columns extending parallel to each other and the plurality of second columns extending perpendicular to the plurality of first columns, wherein the plurality of second columns is located on top of the plurality of first columns, such that the plurality of second columns crosses over the plurality of first columns. A dielectric layer filling in the space between the plurality of first columns and the plurality of second columns, wherein the dielectric layer is in direct contact with a sidewall of each of the plurality layers of the ReRAM stack.