International Business Machines Corporation
Integrated power amplifier

Abstract:

The semiconductor structure includes a semiconductor-on-insulator (SOI) substrate. A group III nitride transistor is formed in a trench in the SOI substrate. The activation of the group III nitride transistor is controlled by a silicon-based transistor. The silicon-based transistor that includes a portion of a silicon layer of the SOI substrate. A group III nitride transistor device is adjacent to the silicon-based transistor.