International Business Machines Corporation
WIMPY VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR WITH DIPOLE LINERS

Abstract:

A semiconductor structure may include a bottom source drain, a top source drain, a gate stack. The top source drain is above the gate stack and the bottom source drain is below the gate stack. The semiconductor structure may also include a bottom spacer and a top spacer. The gate stack is between the bottom spacer and the top spacer. The bottom spacer and the top spacer each comprise a dipole liner. The dipole liner includes a first layer and a second layer. The second layer may be in direct contact with the first layer. The second layer may be made of different material than the first layer. The first layer may be made of silicon oxide. The second layer may be made of silicon nitride or aluminum oxide. The first layer may be in direct contact with the gate stack, the top source drain, and the bottom source drain.