International Business Machines Corporation
VERTICAL FIELD EFFECT TRANSISTOR WITH CROSSLINK FIN ARRANGEMENT

Abstract:

A semiconductor structure, and a method of making the same, includes a semiconductor substrate having an uppermost surface and a fin structure on the uppermost surface of the semiconductor substrate including n first regions extending perpendicular to the uppermost surface of the semiconductor substrate and n-1 second regions extending between and connecting each of the n first regions and parallel to the uppermost surface of the semiconductor substrate, wherein n.gtoreq.3.