International Business Machines Corporation
Method for fabricating a semiconductor device including self-aligned top via formation at line ends

Last updated:

Abstract:

A method for fabricating a semiconductor device includes recessing a first odd hardmask and a first even hardmask to form recessed odd and even hardmasks, forming a first conductive hardmask including first conductive hardmask material on the recessed odd hardmask and a second conductive hardmask on the recessed even hardmask, and forming self-aligned vias at line ends corresponding to the first odd and even conductive lines based at least in part on the first and second conductive hardmasks.

Status:
Grant
Type:

Utility

Filling date:

24 Sep 2019

Issue date:

2 Aug 2022