International Business Machines Corporation
VARIABLE SHEET FORKFET DEVICE

Abstract:

An embodiment of the invention may include a forkFET semiconductor structure, and the method of forming said structure. The structure may include a first FET device and a second FET device separated by a vertical dielectric pillar. The first FET device may include a first plurality of horizontal sheet channels. The second FET device may include a second plurality of horizontal sheet channels. The first plurality of horizontal sheet channels contains more horizontal sheets than the second plurality of horizontal sheet channels. This may enable adjustment of W.sub.eff for different devices on different sides of the pillar or different thicknesses of dielectrics used for the device.