International Business Machines Corporation
ENABLING ANNEAL FOR RELIABILITY IMPROVEMENT AND MULTI-VT WITH INTERFACIAL LAYER REGROWTH SUPPRESSION

Abstract:

A method for fabricating a semiconductor device includes forming an interfacial layer and a dielectric layer on a base structure and around channels of a first gate-all-around field-effect transistor (GAA FET) device within a first region and a second GAA FET device within a second region, forming at least a scavenging metal layer in the first and second regions, and performing an anneal process after forming at least one cap layer.